Investigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution

  • V. Romaka Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics National Academy of Sciences of Ukraine; National University “Lvivska Politechnika”
  • L. Romaka Ivan Franko National University of Lviv
  • Y. Stadnyk Ivan Franko National University of Lviv
  • A. Horyn Ivan Franko National University of Lviv
  • V. Krayovskyy National University "Lviv Polytechnic"
  • I. Romaniv Ivan Franko National University of Lviv
  • P. Garanuyk National University "Lviv Polytechnic"
Keywords: solid solution, electrical conductivity, thermopower coefficient, Fermi level

Abstract

Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in increase of lattice parameter а(х) of Zr1-xVxNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level ΔεFх for Zr1-xVxNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.

References

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Published
2019-04-01
How to Cite
[1]
RomakaV., RomakaL., StadnykY., HorynA., KrayovskyyV., RomanivI. and GaranuykP. 2019. Investigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution. Physics and Chemistry of Solid State. 20, 1 (Apr. 2019), 33-39. DOI:https://doi.org/10.15330/pcss.20.1.39.
Section
Review

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